JANSP2N2218
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSP2N2218 is an NPN bipolar junction transistor designed for demanding applications. This through-hole component, packaged in a TO-39 (TO-205AD) metal can, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a power dissipation capability of 800mW and a wide operating temperature range of -55°C to 200°C, it is suitable for military-grade specifications, adhering to MIL-PRF-19500/251. Key electrical parameters include a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a Vce saturation of 1.6V at 50mA and 500mA. This device is utilized in aerospace, defense, and industrial sectors requiring high reliability and performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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