JANSM2N3637UB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSM2N3637UB is a PNP bipolar junction transistor designed for high-reliability applications. This military-grade component, qualified under MIL-PRF-19500/357, features a breakdown voltage of 175V and a continuous collector current capability of 1A. With a maximum power dissipation of 1W and a saturation voltage of 600mV at 5mA base and 50mA collector current, it offers efficient switching and amplification. The transistor exhibits a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V collector-emitter voltage. Operating across a wide temperature range of -65°C to 200°C (TJ), this surface-mount device is housed in a 3-SMD, No Lead (UB) package, supplied in bulk. Its robust construction and specifications make it suitable for demanding applications in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |