JANSM2N3637
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSM2N3637 is a PNP bipolar junction transistor designed for high-reliability applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, features a maximum collector current of 1 A and a power dissipation of 1 W. It exhibits a collector-emitter breakdown voltage of 175 V and a saturation voltage of 600 mV at 50 mA collector current. The minimum DC current gain (hFE) is rated at 100 at 50 mA and 10 V. Qualified to MIL-PRF-19500/357 standards, this device is suitable for demanding environments and is commonly utilized in aerospace and defense systems. Operating temperature range is -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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