JANSM2N3635L
TRANS PNP 140V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N3635L is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 140V collector-emitter breakdown voltage and a maximum collector current of 1A. With a power dissipation of 1W, it is housed in a TO-205AA (TO-5-3 Metal Can) package suitable for through-hole mounting. The device offers a minimum DC current gain (hFE) of 100 at 50mA and 10V. Collector cutoff current is specified at a maximum of 10µA. Saturation voltage (Vce) is a maximum of 600mV at 5mA base current and 50mA collector current. This transistor meets MIL-PRF-19500/357 qualification, indicating its suitability for military and high-reliability industrial applications, including aerospace and defense systems. Operating temperature range is -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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