JANSM2N3501UB/TR
TRANS NPN 150V 0.3A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N3501UB-TR is an NPN bipolar junction transistor designed for demanding applications. This military-grade component offers a collector-emitter breakdown voltage of 150V and a continuous collector current capability of 300mA. With a maximum power dissipation of 500mW and a low saturation voltage of 400mV at 150mA collector current and 15mA base current, it ensures efficient operation. The device features a minimum DC current gain (hFE) of 100 at 150mA and 10V. Qualified to MIL-PRF-19500/366, the JANSM2N3501UB-TR is suitable for use in aerospace, defense, and high-reliability industrial systems. It is provided in a UB surface-mount package on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |