JANSM2N3501L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N3501L is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 300 mA. With a maximum power dissipation of 1 W and a rated junction temperature range of -65°C to 200°C, it is suitable for military-grade requirements, evidenced by its MIL-PRF-19500/366 qualification. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, with a saturation voltage (Vce(sat)) of 400 mV at 15 mA base current and 150 mA collector current. This device finds application in military and aerospace systems requiring high reliability and specified performance characteristics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |