JANSM2N3501
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N3501 is a high-reliability NPN bipolar junction transistor. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, is rated for a collector-emitter breakdown voltage of 150 V and a continuous collector current of up to 300 mA. It offers a maximum power dissipation of 1 W and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. The saturation voltage (Vce(sat)) is specified at 400 mV maximum for 15 mA base current and 150 mA collector current. Operating temperature range is -65°C to 200°C. This device is qualified to MIL-PRF-19500/366, making it suitable for demanding applications in aerospace and defense.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |