JANSM2N3500L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N3500L is a high-reliability, NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component is housed in a TO-205AA (TO-5) metal can package and features a maximum collector current of 300 mA and a collector-emitter breakdown voltage of 150 V. It offers a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, with a saturation voltage (Vce Sat) of 400 mV at 15 mA base current and 150 mA collector current. The device operates within an extended temperature range of -65°C to 200°C (TJ) and dissipates up to 1 W of power. Qualified to MIL-PRF-19500/366, this transistor is suitable for use in aerospace, defense, and industrial systems requiring robust performance and long-term reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |