JANSM2N3019S
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N3019S is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/391, features a substantial collector current capability of 1 A and a collector-emitter breakdown voltage of 80 V. The device offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V Vce. With a maximum power dissipation of 800 mW and an operating temperature range of -65°C to 200°C, it is suitable for harsh environments. The TO-39 (TO-205AD) metal can package facilitates through-hole mounting. Applications include aerospace, defense, and high-reliability industrial systems. The collector cutoff current is a maximum of 10 nA, and Vce(sat) is 500 mV at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |