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JANSM2N2907AUB

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JANSM2N2907AUB

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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The Microchip Technology JANSM2N2907AUB is a PNP bipolar junction transistor designed for demanding applications. This surface mount component, packaged in a 3-SMD, No Lead (UB) configuration, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. With a power dissipation capability of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V, it provides robust performance. The operating temperature range of -65°C to 200°C (TJ) and military qualification (MIL-PRF-19500/291) make it suitable for aerospace and defense systems. Its Vce saturation is specified at a maximum of 1.6V at 50mA collector current and 500mA base current.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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