JANSM2N2907AUA
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N2907AUA is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding environments. This surface-mount component, in a 4-SMD, No Lead (UA) package, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 600mA. With a maximum power dissipation of 500mW and a wide operating temperature range of -65°C to 200°C, it is qualified to MIL-PRF-19500/291, indicating its suitability for military applications. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 1.6V at 50mA and 500mA. Its low collector cutoff current of 50nA further enhances its reliability. This transistor is commonly utilized in military, aerospace, and high-reliability industrial systems requiring stable small-signal amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |