JANSM2N2906AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N2906AUB is a military-grade PNP bipolar junction transistor (BJT). This surface-mount device, housed in a 3-SMD, No Lead (UB) package, offers a maximum collector current of 600 mA and a collector-emitter breakdown voltage of 60 V. It features a maximum power dissipation of 500 mW and a low collector cutoff current of 50 nA. The device exhibits a minimum DC current gain (hFE) of 40 at 150 mA collector current and 10 V Vce. Designed for operation across a wide temperature range of -65°C to 200°C, this component meets MIL-PRF-19500/291 qualification standards. Its robust construction and performance characteristics make it suitable for applications in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |