JANSM2N2369AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSM2N2369AUB is an NPN bipolar junction transistor (BJT) designed for demanding applications requiring high reliability. This surface-mount device, packaged in a 3-SMD, No Lead (UB) configuration, operates within a broad temperature range of -65°C to 200°C. It offers a 20V collector-emitter breakdown voltage and a maximum power dissipation of 400mW. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA/1V and a Vce saturation of 450mV at 10mA/100mA. The device features a collector cutoff current of less than 400nA and meets MIL-PRF-19500/317 qualification, indicating its suitability for military and aerospace applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 400 mW |
| Qualification | MIL-PRF-19500/317 |