JANSM2N2369AU/TR
RH DUAL - SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N2369AU-TR is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, packaged in a 6-SMD, No Lead configuration, offers a breakdown voltage (Vce) of 15 V and a maximum power dissipation of 500 mW. It features a high DC current gain (hFE) of 40 minimum at 10mA collector current and 1V collector-emitter voltage. The transistor exhibits a low collector cutoff current of 400nA maximum. With an operating temperature range of -65°C to 200°C (TJ), this component meets MIL-PRF-19500/317 qualification, making it suitable for military and aerospace applications. The Vce(sat) is specified at 450mV maximum for a base current of 10mA and collector current of 100mA. This robust device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | U |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/317 |