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JANSM2N2369AU

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JANSM2N2369AU

RH DUAL - SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSM2N2369AU is a high-reliability NPN bipolar junction transistor designed for demanding applications. This MIL-PRF-19500/317 qualified component offers a collector-emitter breakdown voltage of 15V and a maximum power dissipation of 500mW. Featuring a surface mount U package (6-SMD, No Lead), it operates across an extended temperature range of -65°C to 200°C (TJ). Achieving a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage, and a Vce saturation of 450mV at 10mA base current and 100mA collector current, this device is suitable for high-speed switching and amplification. The collector cutoff current is rated at a maximum of 400nA. This component finds application in military and aerospace systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageU
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max500 mW
QualificationMIL-PRF-19500/317

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