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JANSM2N2369A

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JANSM2N2369A

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSM2N2369A is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/317, features a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 500 mW. It offers a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V collector-emitter voltage. The maximum collector cutoff current is 400nA. This through-hole device is housed in a TO-18 (TO-206AA) metal can package. The saturation voltage (Vce Sat) is specified at a maximum of 450mV with 10mA base current and 100mA collector current. Operating temperature ranges from -65°C to 200°C. This component is commonly utilized in applications requiring robust performance in demanding environments, including aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max500 mW
QualificationMIL-PRF-19500/317

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