JANSM2N2222AUBC/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSM2N2222AUBC-TR is an NPN bipolar junction transistor (BJT) designed for demanding applications. This hermetically sealed device features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA, with a collector cutoff current specified at a maximum of 50nA. It offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. The transistor is rated for a maximum power dissipation of 500mW and operates across an extended temperature range of -65°C to 200°C. The surface mount UBC package, supplied on tape and reel, is suitable for high-reliability environments. This component adheres to MIL-PRF-19500/255 qualification, making it a robust choice for aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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