JANSM2N2222AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSM2N2222AUB is an NPN bipolar junction transistor designed for demanding applications requiring robust performance and reliability. This surface-mount device, packaged in a 3-SMD, No Lead (UB) configuration, offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 800mA. With a maximum power dissipation of 500mW and an extended operating temperature range of -65°C to 200°C (TJ), it meets stringent military specifications, including MIL-PRF-19500/255 qualification. Key electrical parameters include a saturation voltage (Vce Sat) of 1V at 50mA base current and 500mA collector current, and a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. The device exhibits a low collector cutoff current of 50nA. This component is suitable for use in military, aerospace, and industrial systems where high reliability under extreme conditions is paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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