JANSM2N2219AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JANSM2N2219AL is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 800 mA. With a power dissipation of 800 mW and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, it is suitable for demanding switching and amplification tasks. The device operates across an extended temperature range of -55°C to 200°C (TJ) and meets MIL-PRF-19500/251 qualification standards, making it ideal for military and aerospace industries. Key parameters include a collector cutoff current of 10 nA and a Vce saturation of 1 V at 50 mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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