JANSM2N2219A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSM2N2219A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a collector current capability of up to 800 mA and a maximum collector-emitter breakdown voltage of 50 V. The JANSM2N2219A features a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, with a Vce saturation of 1 V at 50 mA and 500 mA. With a maximum power dissipation of 800 mW and an operating temperature range of -55°C to 200°C, this device is suitable for use in aerospace, defense, and industrial control systems. The collector cutoff current is a low 10 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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