JANSM2N2218AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSM2N2218AL is a high-reliability NPN bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 800 mA. With a power dissipation rating of 800 mW and a wide operating temperature range of -55°C to 200°C (TJ), it is well-suited for military-grade performance. The JANSM2N2218AL exhibits a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, with a Vce saturation of 1 V at 50 mA and 500 mA. Its low collector cutoff current is rated at 10 nA (Max). This device meets MIL-PRF-19500/251 qualification standards, making it a robust choice for aerospace, defense, and industrial control systems requiring exceptional reliability and performance under extreme conditions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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