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JANSM2N2218AL

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JANSM2N2218AL

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSM2N2218AL is a high-reliability NPN bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 800 mA. With a power dissipation rating of 800 mW and a wide operating temperature range of -55°C to 200°C (TJ), it is well-suited for military-grade performance. The JANSM2N2218AL exhibits a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, with a Vce saturation of 1 V at 50 mA and 500 mA. Its low collector cutoff current is rated at 10 nA (Max). This device meets MIL-PRF-19500/251 qualification standards, making it a robust choice for aerospace, defense, and industrial control systems requiring exceptional reliability and performance under extreme conditions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW
QualificationMIL-PRF-19500/251

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