JANSM2N2218
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSM2N2218 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a collector current capability of up to 800 mA and a maximum power dissipation of 800 mW. It features a collector-emitter breakdown voltage of 50 V and a minimum DC current gain (hFE) of 40 at 150 mA and 10 V. The transistor exhibits a Vce saturation of 1.6 V at 50 mA collector current and 500 mA collector current. With a military-grade qualification (MIL-PRF-19500/251) and an operating temperature range of -55°C to 200°C, this component is suitable for aerospace, defense, and other high-reliability industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
JANS2N5666U3
TRANS NPN 200V 5A U3
2C3999
POWER BJT
