JANSL2N3637L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSL2N3637L is a PNP bipolar junction transistor designed for demanding applications requiring high reliability and performance. This military-grade component, qualified under MIL-PRF-19500/357, features a breakdown voltage of 175V and can handle a continuous collector current of up to 1A. With a maximum power dissipation of 1W and a low collector cutoff current of 10µA, it is suitable for signal amplification and switching in challenging environments. The TO-205AA (TO-5AA) metal can package facilitates through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V Vce, with a saturation voltage (Vce Sat) of 600mV at 5mA base current and 50mA collector current. This transistor finds application in aerospace, defense, and industrial systems where robust performance is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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