JANSL2N3637
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSL2N3637 is a PNP bipolar junction transistor designed for robust performance. This military-grade component, qualified to MIL-PRF-19500/357, features a 175 V collector-emitter breakdown voltage and a maximum collector current of 1 A. It offers a typical DC current gain (hFE) of 100 at 50mA and 10V, with a saturation voltage (Vce Sat) of 600mV at 5mA/50mA. The device is packaged in a TO-39 (TO-205AD) metal can with a through-hole mounting type. It is rated for a maximum power dissipation of 1 W and operates across a wide temperature range of -65°C to 200°C. This transistor finds application in demanding environments, including aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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