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JANSL2N3635UB

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JANSL2N3635UB

TRANS PNP 140V 1A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSL2N3635UB is a PNP bipolar junction transistor designed for high-reliability applications. Featuring a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 1A, this device is rated for a maximum power dissipation of 1.5W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 10V collector-emitter voltage, with a saturation voltage (Vce(sat)) not exceeding 600mV at 5mA base current and 50mA collector current. The maximum collector cutoff current is 10µA. This MIL-PRF-19500/357 qualified component is housed in a 4-SMD, No Lead (UB) package, suitable for surface mounting. It operates across a wide temperature range of -65°C to 200°C (TJ). This component is commonly utilized in military and high-temperature electronics.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max1.5 W
QualificationMIL-PRF-19500/357

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