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JANSL2N3635

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JANSL2N3635

TRANS PNP 140V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSL2N3635 is a PNP bipolar junction transistor (BJT) rated for a 140V collector-emitter breakdown voltage and a continuous 1A collector current. This device features a maximum power dissipation of 1W and a low saturation voltage of 600mV at 50mA collector current and 5mA base current. With a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V Vce, the JANSL2N3635 is suitable for applications requiring robust current handling and voltage swing. The TO-39 (TO-205AD) metal can package facilitates through-hole mounting. This component meets MIL-PRF-19500/357 specifications, indicating its suitability for military and demanding industrial environments. Typical applications include power switching and amplification circuits in aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max1 W
QualificationMIL-PRF-19500/357

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