JANSL2N3501UB/TR
TRANS NPN 150V 0.3A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N3501UB-TR is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 150V collector-emitter breakdown voltage and a continuous collector current capability of 300mA. With a power dissipation of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V, it offers robust performance. The Vce(sat) is a maximum of 400mV at 15mA base current and 150mA collector current. This MIL-PRF-19500/366 qualified component is housed in a UB package (3-SMD, No Lead) and supplied on tape and reel (TR). Its extended operating temperature range of -65°C to 200°C makes it suitable for aerospace and defense systems, as well as other high-temperature environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/366 |
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