JANSL2N3501L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSL2N3501L is an NPN bipolar junction transistor designed for high-reliability applications. This through-hole component, packaged in a TO-205AA (TO-5-3 Metal Can), offers a collector-emitter breakdown voltage of 150 V and a maximum collector current of 300 mA. With a power dissipation of 1 W and a wide operating temperature range of -65°C to 200°C, it meets stringent military specifications, including MIL-PRF-19500/366. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce(sat) of 400mV at 15mA collector current. This transistor is suitable for demanding applications in defense, aerospace, and industrial sectors requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |