JANSL2N3501
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N3501 is an NPN bipolar junction transistor designed for demanding applications. This military-grade component offers a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 300 mA. With a maximum power dissipation of 1 W and a wide operating temperature range of -65°C to 200°C, it is suitable for use in aerospace, defense, and industrial control systems. The TO-39 (TO-205AD) metal can package facilitates robust through-hole mounting. Key electrical specifications include a saturation voltage (Vce(sat)) of 400 mV at 15 mA base current and 150 mA collector current, and a minimum DC current gain (hFE) of 100 at 150 mA collector current and 10 V collector-emitter voltage. This device is qualified to MIL-PRF-19500/366.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |