JANSL2N3500L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N3500L is an NPN bipolar junction transistor designed for high-reliability applications. This device features a 150 V collector-emitter breakdown voltage and a maximum collector current of 300 mA, with a power dissipation of 1 W. The JANSL2N3500L offers a minimum DC current gain (hFE) of 40 at 150 mA and 10 V, and a Vce(sat) of 400 mV at 15 mA and 150 mA. It exhibits a low collector cutoff current (ICBO) of 10 µA. Qualified to MIL-PRF-19500/366, this transistor operates within a temperature range of -65°C to 200°C (TJ). The component is housed in a TO-205AA (TO-5AA) metal can package suitable for through-hole mounting. Its robustness makes it suitable for use in aerospace and defense electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |