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JANSL2N3499L

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JANSL2N3499L

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSL2N3499L is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole device features a TO-5AA metal can package and operates within a temperature range of -65°C to 200°C. Key electrical specifications include a collector-emitter breakdown voltage of 100V, a maximum collector current of 500mA, and a power dissipation of 1W. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. This MIL-PRF-19500/366 qualified component is suitable for use in demanding environments across aerospace and defense industries. The transistor exhibits a Vce(sat) of 600mV at 30mA base current and 300mA collector current, with a collector cutoff current (ICBO) of 10µA maximum.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W
QualificationMIL-PRF-19500/366

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