JANSL2N3499L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N3499L is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole device features a TO-5AA metal can package and operates within a temperature range of -65°C to 200°C. Key electrical specifications include a collector-emitter breakdown voltage of 100V, a maximum collector current of 500mA, and a power dissipation of 1W. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. This MIL-PRF-19500/366 qualified component is suitable for use in demanding environments across aerospace and defense industries. The transistor exhibits a Vce(sat) of 600mV at 30mA base current and 300mA collector current, with a collector cutoff current (ICBO) of 10µA maximum.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |