JANSL2N3499
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N3499 is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a maximum collector current of 500 mA and a collector-emitter breakdown voltage of 100 V. It features a power dissipation rating of 1 W and a low collector cutoff current of 10µA (ICBO). The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. The Vce(sat) is specified at a maximum of 600mV at 30mA base current and 300mA collector current. This device meets MIL-PRF-19500/366 qualification and operates within a temperature range of -65°C to 200°C (TJ). It is suitable for use in aerospace, defense, and industrial equipment requiring high-reliability transistors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |