JANSL2N3498L
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSL2N3498L is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-205AA (TO-5AA) metal can package, boasts a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 500mA. With a maximum power dissipation of 1W and an operating temperature range of -65°C to 200°C (TJ), it is well-suited for environments requiring robust performance. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a Vce saturation voltage of 600mV at 30mA collector current and 300mA base current. The device meets MIL-PRF-19500/366 qualification, ensuring suitability for aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/366 |