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JANSL2N3498

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JANSL2N3498

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSL2N3498 is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component offers a 100V collector-emitter breakdown voltage and a maximum collector current of 500mA, with a power dissipation capability of 1W. It features a minimum DC current gain (hFE) of 40 at 150mA and 10V. The transistor exhibits a saturation voltage of 600mV at 30mA base current and 300mA collector current. Operating across a temperature range of -65°C to 200°C, this device is qualified to MIL-PRF-19500/366. It is commonly utilized in defense and aerospace applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W
QualificationMIL-PRF-19500/366

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