JANSL2N3019S
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JANSL2N3019S is an NPN bipolar junction transistor designed for high-reliability applications. This MIL-PRF-19500/391 qualified component offers an 80V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW, it is suitable for demanding environments. The device features a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a saturation voltage (Vce Sat) of 500mV at 50mA/500mA. Operating across a wide temperature range of -65°C to 200°C, the JANSL2N3019S is housed in a TO-39 (TO-205AD) metal can package for through-hole mounting. Its robust design makes it a critical component in aerospace, defense, and industrial systems requiring dependable performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/391 |
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