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JANSL2N3019

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JANSL2N3019

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSL2N3019 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/391, features a TO-205AA (TO-5-3 Metal Can) through-hole package. It offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 1A. Key parameters include a maximum power dissipation of 800mW and a low collector cutoff current of 10nA. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. Saturation voltage (Vce Sat) is specified at a maximum of 500mV with a base current of 50mA driving a collector current of 500mA. Its operational temperature range spans from -65°C to 200°C. This transistor is suitable for use in aerospace, defense, and other high-reliability electronic systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max800 mW
QualificationMIL-PRF-19500/391

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