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JANSL2N2907AUB

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JANSL2N2907AUB

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSL2N2907AUB is a PNP bipolar junction transistor (BJT) designed for robust performance. This military-grade component, qualified to MIL-PRF-19500/291, features a 60 V collector-emitter breakdown voltage and a maximum collector current of 600 mA. With a power dissipation rating of 500 mW and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, it is suitable for demanding applications. The device operates across a wide temperature range of -65°C to 200°C (TJ). Packaged in a 3-SMD, No Lead (UB) surface-mount configuration, this transistor is commonly utilized in aerospace, defense, and high-reliability industrial systems. The saturation voltage (Vce(sat)) is specified at 1.6 V maximum at 50 mA base current and 500 mA collector current. Collector cutoff current is a maximum of 50 nA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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