JANSL2N2907AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N2907AUB is a PNP bipolar junction transistor (BJT) designed for robust performance. This military-grade component, qualified to MIL-PRF-19500/291, features a 60 V collector-emitter breakdown voltage and a maximum collector current of 600 mA. With a power dissipation rating of 500 mW and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, it is suitable for demanding applications. The device operates across a wide temperature range of -65°C to 200°C (TJ). Packaged in a 3-SMD, No Lead (UB) surface-mount configuration, this transistor is commonly utilized in aerospace, defense, and high-reliability industrial systems. The saturation voltage (Vce(sat)) is specified at 1.6 V maximum at 50 mA base current and 500 mA collector current. Collector cutoff current is a maximum of 50 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |