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JANSL2N2907AL

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JANSL2N2907AL

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Microchip Technology JANSL2N2907AL is a military-grade PNP bipolar junction transistor. This through-hole component, housed in a TO-18 (TO-206AA) metal can package, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. With a power dissipation of 500mW and a wide operating temperature range of -65°C to 200°C, it features a minimum DC current gain (hFE) of 100 at 150mA and 10V. The collector cutoff current is specified at a maximum of 50nA. This transistor is qualified under MIL-PRF-19500/291 and is suitable for applications in aerospace and defense sectors requiring high reliability.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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