JANSL2N2369AUBC/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N2369AUBC-TR is an NPN bipolar junction transistor designed for high-reliability applications. This surface-mount device, packaged in a 3-SMD, No Lead UBC configuration and supplied on tape and reel, offers a collector-emitter breakdown voltage of 15 V. It features a maximum power dissipation of 360 mW and a collector cutoff current of 400 nA. The DC current gain (hFE) is a minimum of 20 at 100 mA collector current and 1 V collector-emitter voltage. The Vce saturation voltage is specified at 450 mV maximum for a base current of 10 mA and a collector current of 100 mA. This component is suitable for use in demanding environments, with an operating temperature range of -65°C to 200°C (TJ). The JAN prefix indicates adherence to stringent military standards, making it suitable for aerospace and defense applications, as well as industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UBC |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
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