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JANSL2N2369A

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JANSL2N2369A

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANSL2N2369A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This MIL-PRF-19500/317 qualified component features a 15V collector-emitter breakdown voltage and a 500mW power dissipation in a standard TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. It exhibits a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V Vce. The saturation voltage (Vce(sat)) is a maximum of 450mV at 10mA base current and 100mA collector current. The collector cutoff current (Icbo) is rated at a maximum of 400nA. This device is commonly employed in military and aerospace systems, as well as industrial control and instrumentation where robust performance and extreme temperature operation from -65°C to 200°C are critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-18 (TO-206AA)
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max500 mW
QualificationMIL-PRF-19500/317

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