JANSL2N2221AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N2221AUB is a military-grade NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. It features a low saturation voltage of 1V at 50mA base current and 500mA collector current, with a minimum DC current gain (hFE) of 40 at 150mA collector current and 10V collector-emitter voltage. The transistor is rated for a maximum power dissipation of 500mW and an operating temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/255, the JANSL2N2221AUB is suitable for demanding applications in aerospace and defense sectors, as well as industrial control systems. It is supplied in a UB package for bulk distribution.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |