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JANSL2N2221AUA

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JANSL2N2221AUA

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSL2N2221AUA is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/255, features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a maximum power dissipation of 650mW, it offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. The device exhibits a Vce(sat) of 1V at 50mA/500mA and a collector cutoff current of 50nA. Packaged in a 4-SMD, No Lead (UA) surface-mount configuration, it operates across a wide temperature range of -65°C to 200°C. This transistor is suitable for use in aerospace and defense systems requiring robust performance and extended operational life.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUA
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max650 mW
QualificationMIL-PRF-19500/255

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