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JANSL2N2219A

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JANSL2N2219A

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology JANSL2N2219A is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, offers a collector current capability of up to 800 mA with a maximum collector-emitter breakdown voltage of 50 V. The device boasts a power dissipation rating of 800 mW and exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. The collector cutoff current is rated at a maximum of 10 nA, and the Vce saturation is 1 V at 50 mA collector current and 500 mA base current. Operating across a wide temperature range of -55°C to 200°C, this transistor is suitable for use in aerospace, defense, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW

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