JANSL2N2219
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JANSL2N2219 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/251, offers a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 800 mA. It features a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, with a saturation voltage (Vce(sat)) of 1.6 V at 50 mA and 500 mA. The transistor dissipates a maximum power of 800 mW and operates across a wide temperature range of -55°C to 200°C. Packaged in a TO-39 (TO-205AD) metal can with through-hole mounting, the JANSL2N2219 is suitable for demanding aerospace, defense, and industrial systems requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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