JANSL2N2218AL
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSL2N2218AL is an NPN bipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. This through-hole device, housed in a TO-205AA (TO-5-3 Metal Can) package, offers a minimum DC current gain (hFE) of 40 at 150mA and 10V. It is rated for a maximum power dissipation of 800mW and an operating temperature range of -55°C to 200°C. The JANSL2N2218AL meets MIL-PRF-19500/251 qualification, indicating its suitability for demanding military applications. Typical industries utilizing this component include aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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