JANSL2N2218A
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSL2N2218A is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a maximum collector-emitter breakdown voltage of 50 V and a continuous collector current capability of 800 mA. With a maximum power dissipation of 800 mW and a wide operating temperature range of -55°C to 200°C, it is suitable for harsh environments. The DC current gain (hFE) is a minimum of 40 at 150mA collector current and 10V Vce. Featuring a TO-39 (TO-205AD) metal can package for through-hole mounting, this device meets MIL-PRF-19500/251 qualification. It finds application in military and aerospace systems requiring robust performance. The saturation voltage (Vce Sat) is a maximum of 1V at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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