JANSH2N3439U4/TR
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANSH2N3439U4-TR is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount component, housed in a U4 package (3-SMD, No Lead), offers a robust 350V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW and a wide operating temperature range of -65°C to 200°C, it is suitable for high-reliability environments. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 20mA/10V and a low collector cutoff current of 2µA. The saturation voltage (Vce Sat) is specified at a maximum of 500mV for 4mA base current and 50mA collector current. This component is commonly utilized in power switching and amplification circuits across various industrial sectors. The JANSH2N3439U4-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
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