JANSH2N3439U4
RH POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSH2N3439U4 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This surface-mount device, packaged in a U4 (3-SMD, No Lead) configuration, offers a collector-emitter breakdown voltage of 350V and a maximum continuous collector current of 1A. With a power dissipation rating of 800mW and a saturation voltage of 500mV at 4mA/50mA, it provides efficient operation. The minimum DC current gain (hFE) is 40 at 20mA/10V, and the collector cutoff current is a low 2µA. This component is suitable for use in industrial, aerospace, and defense applications requiring robust performance in demanding environments. Operating temperature range is -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U4 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
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