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JANSH2N2369AUB

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JANSH2N2369AUB

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANSH2N2369AUB is a military-grade NPN bipolar junction transistor designed for high-reliability applications. This surface-mount device, housed in a 3-SMD, No Lead (UB) package, offers a collector-emitter breakdown voltage of 20 V and a maximum power dissipation of 400 mW. It features a minimum DC current gain (hFE) of 40 at 10 mA collector current and 1 V collector-emitter voltage, with a Vce saturation of 450 mV at 10 mA base current and 100 mA collector current. The current collector cutoff is rated at a maximum of 400 nA. This component meets MIL-PRF-19500/317 qualification standards, ensuring robust performance across an operating temperature range of -65°C to 200°C. It is commonly utilized in defense and aerospace systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max400 mW
QualificationMIL-PRF-19500/317

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