JANSH2N2369AUB
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSH2N2369AUB is a military-grade NPN bipolar junction transistor designed for high-reliability applications. This surface-mount device, housed in a 3-SMD, No Lead (UB) package, offers a collector-emitter breakdown voltage of 20 V and a maximum power dissipation of 400 mW. It features a minimum DC current gain (hFE) of 40 at 10 mA collector current and 1 V collector-emitter voltage, with a Vce saturation of 450 mV at 10 mA base current and 100 mA collector current. The current collector cutoff is rated at a maximum of 400 nA. This component meets MIL-PRF-19500/317 qualification standards, ensuring robust performance across an operating temperature range of -65°C to 200°C. It is commonly utilized in defense and aerospace systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 400 mW |
| Qualification | MIL-PRF-19500/317 |