JANSH2N2222AUB/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANSH2N2222AUB-TR is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This hermetically sealed device offers a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 800mA, with a power dissipation of 500mW. Featuring a minimum DC current gain (hFE) of 100 at 150mA and 10V, it is suitable for amplification and switching functions. The VEN saturation is specified at 1V maximum for 50mA base current and 500mA collector current. Operating across a wide temperature range of -65°C to 200°C, this transistor meets the stringent requirements of MIL-PRF-19500/255 qualification. Typically employed in defense, aerospace, and industrial control systems, the JANSH2N2222AUB-TR is supplied in a 3-SMD, No Lead UB package, presented on tape and reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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